Abstract:

A coherently strained stressor structure is used to create a one-dimensional periodic potential in the two-dimensional electron gas at a AlGaAs/GaAs heterointerface. We demonstrate that from magnetotransport the Fourier coefficients of the conduction band modulation can be determined. In contrast to conventional electrostatic patterning, “hard” potential modulation with dominant contributions of higher harmonics is achieved. In the regime of narrow stressor-stressor distance, the strain-induced potential modulation can be calculated analytically from elasticity theory. The calculated magnetoresistance which can be derived from the stressor-induced potential is in good agreement with the experimental data.