Abstract in Englisch:

Metal-organic, single-source, low-temperature, morphology-controlled growth of carbon nanostructures is achieved, using an inductively coupled plasma-enhanced chemical vapor deposition system. Three distinctive morphologies, namely nanoflakes, nanowalls (CNWs) and nanorods (and intermediates between these morphologies), can be reproducibly deposited, depending on the process parameters. The synthesized structures can be described as hybrid materials consisting of metal oxide incorporated in a carbon matrix material. Since the incorporation of metal oxide into the carbon structure significantly influences their growth, the synthesis cannot be described solely with the existing models for the growth of CNWs. Optical emission spectroscopy is used to measure the relative number density of suspected growth and etching species in the plasma, while physical and chemical surface analysis techniques (scanning electron microscopy, Raman spectroscopy, scanning Auger microscopy and x-ray photoelectron spectroscopy) were employed to characterize the properties of the different nanostructures. Therefore, by using methods for both plasma and surface characterization, the growth process can be understood. The precursor dissociation in the plasma can be directly linked to the deposited morphology, as the incorporation of Al₂O₃ into the nanostructures is found to be a major cause for the transition between morphologies, by changing the dominant type of defect within the carbon structure.