Anti-Blooming Clocking for Time-Delay Integration CCDs
In: Sensors, Jg. 22 (2022), Heft 19, Artikel 7520
2022Artikel/Aufsatz in ZeitschriftOA Gold
ElektrotechnikFakultät für Ingenieurwissenschaften » Elektrotechnik und Informationstechnik » Elektronische Bauelemente und Schaltungen
Damit verbunden: 1 Publikation(en)
Titel in Englisch:
Anti-Blooming Clocking for Time-Delay Integration CCDs
Autor*in:
Piechaczek, Denis Szymon
- ORCID
- 0000-0001-5796-8512
- Sonstiges
- korrespondierende*r Autor*in
- LSF ID
- 13457
- ORCID
- 0000-0001-8172-0568
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- LSF ID
- 1309
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- GND
- 173084451
- LSF ID
- 50200
- ORCID
- 0000-0003-3416-3310
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2022
Open Access?:
OA Gold
Web of Science ID
PubMed ID
Scopus ID
Notiz:
CA Piechaczek
Sprache des Textes:
Englisch
Schlagwort, Thema:
blooming ; charge-coupled device ; conversion gain ; photon transfer curve ; responsivity ; signal-to-noise ratio ; time delay integration
Abstract in Englisch:
This paper presents an investigation of the responsivity of a time-delay integration (TDI) charge-coupled device that employs anti-blooming clocking and uses a varying number of TDI stages. The influence of charge blooming caused by unused TDI stages in a TDI deployed selection scheme is shown experimentally, and an anti-blooming clocking mechanism is analyzed. The impact of blooming on sensor characteristics, such as the responsivity, the conversion gain, and the signal-to-noise ratio, is investigated. A comparison of the measurements with and without this anti-blooming clocking mechanism is presented and discussed in detail.