Fu, Qingqing; Li, Wen; Kruis, Frank Einar:
Highly conductive copper films prepared by multilayer sintering of nanoparticles synthesized via arc discharge
In: Nanotechnology, Jg. 34 (2023), Heft 22, Artikel 225601
2023Artikel/Aufsatz in ZeitschriftOA Hybrid
ElektrotechnikFakultät für Ingenieurwissenschaften » Elektrotechnik und Informationstechnik » NanostrukturtechnikForschungszentren » Center for Nanointegration Duisburg-Essen (CENIDE)
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Titel in Englisch:
Highly conductive copper films prepared by multilayer sintering of nanoparticles synthesized via arc discharge
Autor*in:
Fu, QingqingUDE
LSF ID
59648
ORCID
0000-0003-1668-9503ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
korrespondierende*r Autor*in
;
Li, Wen
;
Kruis, Frank EinarUDE
GND
1208325426
LSF ID
3631
ORCID
0000-0001-5008-8133ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2023
Open Access?:
OA Hybrid
PubMed ID
Scopus ID
Sprache des Textes:
Englisch
Schlagwort, Thema:
aerosol synthesis ; conductive inks ; copper nanoparticles ; film porosity ; formic acid sintering

Abstract in Englisch:

The major challenges in producing highly electrically conductive copper films are the oxide content and the porosity of the sintered films. This study developed a multilayer sintering method to remove the copper oxides and reduce copper film porosity. We used a self-built arc discharge reactor to produce copper nanoparticles. Copper nanoparticles produced by arc discharge synthesis have many advantages, such as low cost and a high production rate. Conductive inks were prepared from copper nanoparticles to obtain thin copper films on glass substrates. As demonstrated by scanning electron microscopy analyses and electrical resistivity measurements, the copper film porosity and electrical resistivity cannot be significantly reduced by prolonged sintering time or increasing single film thickness. Instead, by applying the multilayer sintering method, where the coating and sintering process was repeated up to four times in this study, the porosity of copper films could be effectively reduced from 33.6% after one-layer sintering to 3.7% after four-layer sintering. Copper films with an electrical resistivity of 3.49 ± 0.35μΩ·cm (two times of the bulk copper) have been achieved after four-layer sintering, while one-layer sintered copper films were measured to possess resistivity of 11.17 ± 2.17μΩ·cm.