- LSF ID
- 61567
- ORCID
- 0000-0002-0287-1198
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- LSF ID
- 61290
- ORCID
- 0000-0003-2844-1134
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- LSF ID
- 59455
- ORCID
- 0000-0002-3961-0426
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- GND
- 1162945346
- LSF ID
- 11041
- ORCID
- 0000-0002-9374-2868
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- GND
- 1266252894
- LSF ID
- 14826
- ORCID
- 0000-0001-5947-1366
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- GND
- 1227773390
- LSF ID
- 10367
- ORCID
- 0000-0002-5785-1186
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- LSF ID
- 60964
- ORCID
- 0000-0002-7091-2991
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
- LSF ID
- 61226
- ORCID
- 0000-0002-4084-7711
- Sonstiges
- der Hochschule zugeordnete*r Autor*in
Abstract in Englisch:
Transition metal dichalcogenides (TMDCs) monolayers, as two-dimensional (2D) direct bandgap semiconductors, hold promise for advanced optoelectronic and photocatalytic devices. Interaction with three-dimensional (3D) metals, like Au, profoundly affects their optical properties, posing challenges in characterizing the monolayer’s optical responses within the semiconductor-metal junction. In this study, using precise po-polarization-controlled final-state sum frequency generation (FS-SFG), we successfully isolated the optical responses of a MoS2 monolayer from a MoS2/Au junction. The resulting SFG spectra exhibit a linear line shape, devoid of A or B exciton features, attributed to the strong dielectric screening and substrate induced doping. The linear lineshape illustrates the expected constant density of states (DOS) at the band edge of the 2D semiconductor, a feature often obscured by excitonic interactions in week-screening conditions such as in a free-standing monolayer. Extrapolation yields the onset of a direct quasiparticle bandgap of about 1:650:20 eV, indicating a strong bandgap renormalization. This study not only enriches our understanding of the optical responses of a 2D semiconductor in extreme screening conditions but also provides a critical reference for advancing 2D semiconductor-based photocatalytic applications.